Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition

Qinghua Huang; Wei Wang; Falong Jia; Zhirong Zhang

doi:10.1016/S1005-8850(06)60058-3

Volume 13 Issue 3

Jun. 2006

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文章导航 > 矿物冶金与材料学报（英文版） > 2006 > 13(3) : 277-280. > DOI: 10.1016/S1005-8850(06)60058-3

Cite this article as:

Qinghua Huang, Wei Wang, Falong Jia, and Zhirong Zhang, Preparation of Bi_2-xSb_xTe₃ thermoelectric films by electrodeposition, J. Univ. Sci. Technol. Beijing , 13(2006), No. 3, pp.277-280. https://dx.doi.org/10.1016/S1005-8850(06)60058-3

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Materials

Preparation of Bi_2-xSb_xTe₃ thermoelectric films by electrodeposition

Department of Applied Chemistry, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China

基金项目:

This work was financially supported by the National Key Project on Basic Research of China (No.ZM200103A01)

通信作者:
Wei Wang E-mail: wwangg@tju.edu.cn

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中文摘要

Bi_2-xSb_xTe₃ thermoelectric films were electrochemically deposited from the solution containing Bi³⁺, HTeO²⁺ and SbO⁺. ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi_2-xSb_xTe₃ films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi_2-xSb_xTe₃ films were measured. The results showed that the composition of the film electrodeposited at ?0.5 V is Bi_0.5Sb_1.5Te₃ with the largest Seebeck coefficient of 213 μV·K^-1.

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Materials

Preparation of Bi_2-xSb_xTe₃ thermoelectric films by electrodeposition

Author Affilications

Department of Applied Chemistry, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China

Funds:
This work was financially supported by the National Key Project on Basic Research of China (No.ZM200103A01)
Received: 10 April 2005;

Abstract:

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