Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition

Qinghua Huang; Wei Wang; Falong Jia; Zhirong Zhang

doi:10.1016/S1005-8850(06)60058-3

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Qinghua Huang, Wei Wang, Falong Jia, and Zhirong Zhang, Preparation of Bi_2-xSb_xTe₃ thermoelectric films by electrodeposition, J. Univ. Sci. Technol. Beijing , 13(2006), No. 3, pp.277-280. https://dx.doi.org/10.1016/S1005-8850(06)60058-3

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Preparation of Bi_2-xSb_xTe₃ thermoelectric films by electrodeposition

摘要: Bi_2-xSb_xTe₃ thermoelectric films were electrochemically deposited from the solution containing Bi³⁺, HTeO²⁺ and SbO⁺. ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi_2-xSb_xTe₃ films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi_2-xSb_xTe₃ films were measured. The results showed that the composition of the film electrodeposited at ?0.5 V is Bi_0.5Sb_1.5Te₃ with the largest Seebeck coefficient of 213 μV·K^-1.

Preparation of Bi_2-xSb_xTe₃ thermoelectric films by electrodeposition

Abstract: Bi_2-xSb_xTe₃ thermoelectric films were electrochemically deposited from the solution containing Bi³⁺, HTeO²⁺ and SbO⁺. ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi_2-xSb_xTe₃ films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi_2-xSb_xTe₃ films were measured. The results showed that the composition of the film electrodeposited at ?0.5 V is Bi_0.5Sb_1.5Te₃ with the largest Seebeck coefficient of 213 μV·K^-1.

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