Cite this article as:

Wei-Long Liu, Wen-Jauh Chen, Ting-Kan Tsai, Hsun-Heng Tsai, and Shu-Huei Hsieh, Interface structure between epitaxial NiSi2 and Si, J. Univ. Sci. Technol. Beijing , 13(2006), No. 6, pp.558-563. https://dx.doi.org/10.1016/S1005-8850(06)60113-8
Wei-Long Liu, Wen-Jauh Chen, Ting-Kan Tsai, Hsun-Heng Tsai, and Shu-Huei Hsieh, Interface structure between epitaxial NiSi2 and Si, J. Univ. Sci. Technol. Beijing , 13(2006), No. 6, pp.558-563. https://dx.doi.org/10.1016/S1005-8850(06)60113-8
shu
引用本文 PDF XML SpringerLink

Interface structure between epitaxial NiSi2 and Si

摘要: The interface structure between the Si and NiSi2 epitaxially grown on the (112) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi2 epitaxially grown on the (112) Si substrate has six different types:type A NiSi2 (111)/(111) Si, type A NiSi2 (001)/(001) Si, type B NiSi2 (111)/(111) Si, type B NiSi2 (112)/(112) Si, type B NiSi2 (221)/(001) Si, and type B NiSi2 (114)/(110) Si. And there are one or more different atomic structures for one type of interface.

 

Interface structure between epitaxial NiSi2 and Si

Abstract: The interface structure between the Si and NiSi2 epitaxially grown on the (112) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi2 epitaxially grown on the (112) Si substrate has six different types:type A NiSi2 (111)/(111) Si, type A NiSi2 (001)/(001) Si, type B NiSi2 (111)/(111) Si, type B NiSi2 (112)/(112) Si, type B NiSi2 (221)/(001) Si, and type B NiSi2 (114)/(110) Si. And there are one or more different atomic structures for one type of interface.

 

    HTML全文
    • 资源附件(0)
    • 相关文章
    施引文献

/

返回文章
返回