Xiaolan Song, Haiping Yang, Xunda Shi, Xi He, and Guanzhou Qiu, Electrochemical behaviors of silicon wafers in silica slurry, J. Univ. Sci. Technol. Beijing, 15(2008), No. 4, pp. 495-499. https://doi.org/10.1016/S1005-8850(08)60093-6
Cite this article as:
Xiaolan Song, Haiping Yang, Xunda Shi, Xi He, and Guanzhou Qiu, Electrochemical behaviors of silicon wafers in silica slurry, J. Univ. Sci. Technol. Beijing, 15(2008), No. 4, pp. 495-499. https://doi.org/10.1016/S1005-8850(08)60093-6
Xiaolan Song, Haiping Yang, Xunda Shi, Xi He, and Guanzhou Qiu, Electrochemical behaviors of silicon wafers in silica slurry, J. Univ. Sci. Technol. Beijing, 15(2008), No. 4, pp. 495-499. https://doi.org/10.1016/S1005-8850(08)60093-6
Citation:
Xiaolan Song, Haiping Yang, Xunda Shi, Xi He, and Guanzhou Qiu, Electrochemical behaviors of silicon wafers in silica slurry, J. Univ. Sci. Technol. Beijing, 15(2008), No. 4, pp. 495-499. https://doi.org/10.1016/S1005-8850(08)60093-6
The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of (100) sttrface was lower than that of(111), whereas the current density of (100) was much higher than that of(111).
The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of (100) sttrface was lower than that of(111), whereas the current density of (100) was much higher than that of(111).
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