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Shouzhen Jiang, Guangwei Yu, Yingmin Wang, Xiaobo Hu, Xiangang Xu, and Minhua Jiang, Investigation of the 6H-SiC (0001) surface by AFM, J. Univ. Sci. Technol. Beijing , 15(2008), No. 5, pp.654-658. https://dx.doi.org/10.1016/S1005-8850(08)60122-X
Shouzhen Jiang, Guangwei Yu, Yingmin Wang, Xiaobo Hu, Xiangang Xu, and Minhua Jiang, Investigation of the 6H-SiC (0001) surface by AFM, J. Univ. Sci. Technol. Beijing , 15(2008), No. 5, pp.654-658. https://dx.doi.org/10.1016/S1005-8850(08)60122-X
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Investigation of the 6H-SiC (0001) surface by AFM

摘要: Micropipe and step structures on 6H-SiC (0001) surface were investigated by an atomic force microscopy (AFM). On the facet,all micropipes examined are the origins of spiral steps,indicating that dislocations intersect the surface at these points. Micropipes are empty-core super-dislocations as originally described by Frank. The micropipe radius increases with the square of the dislocation Burgers vector. From the center to the periphery,step structures change with different surface inclinations. Regular step is observed within the central faceted area. Step bunching and atomically rough surfaces are observed within the peripheral convex area. If the inclination with respect to the (0001) plane is large enough,step bunching of 15R-SiC can be observed.

 

Investigation of the 6H-SiC (0001) surface by AFM

Abstract: Micropipe and step structures on 6H-SiC (0001) surface were investigated by an atomic force microscopy (AFM). On the facet,all micropipes examined are the origins of spiral steps,indicating that dislocations intersect the surface at these points. Micropipes are empty-core super-dislocations as originally described by Frank. The micropipe radius increases with the square of the dislocation Burgers vector. From the center to the periphery,step structures change with different surface inclinations. Regular step is observed within the central faceted area. Step bunching and atomically rough surfaces are observed within the peripheral convex area. If the inclination with respect to the (0001) plane is large enough,step bunching of 15R-SiC can be observed.

 

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