摘要:
It was reported that both dielectricity and magnetism at room temperature were appreciably improved in Bi
4Fe
2TiO
12 film compared with Bi
4Fe
2TiO
12 bulk. X-ray diffraction profiles reveal similar crystalline nature and random orientation of the two, but X-ray photoelectron spectroscopy (XPS) experiments indicate that it is 1.4 eV lower binding energy of core-state Ols in the film relative to that of the bulk, so the improvement of multiferroics in the film is attributed to oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.