Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk

Jun Lu, Lijie Qiao, Wuyang Chu

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    Cite this article as:

    Jun Lu, Lijie Qiao, and Wuyang Chu, Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk, J. Univ. Sci. Technol. Beijing , 15(2008), No. 6, pp.782-785. https://dx.doi.org/10.1016/S1005-8850(08)60287-X
    Jun Lu, Lijie Qiao, and Wuyang Chu, Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk, J. Univ. Sci. Technol. Beijing , 15(2008), No. 6, pp.782-785. https://dx.doi.org/10.1016/S1005-8850(08)60287-X
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    Materials

    Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk

      通信作者:

      Lijie Qiao E-mail: lqiao@ustb.edu.cn

    It was reported that both dielectricity and magnetism at room temperature were appreciably improved in Bi4Fe2TiO12 film compared with Bi4Fe2TiO12 bulk. X-ray diffraction profiles reveal similar crystalline nature and random orientation of the two, but X-ray photoelectron spectroscopy (XPS) experiments indicate that it is 1.4 eV lower binding energy of core-state Ols in the film relative to that of the bulk, so the improvement of multiferroics in the film is attributed to oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.

     

    Materials

    Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk

    Author Affilications
    It was reported that both dielectricity and magnetism at room temperature were appreciably improved in Bi4Fe2TiO12 film compared with Bi4Fe2TiO12 bulk. X-ray diffraction profiles reveal similar crystalline nature and random orientation of the two, but X-ray photoelectron spectroscopy (XPS) experiments indicate that it is 1.4 eV lower binding energy of core-state Ols in the film relative to that of the bulk, so the improvement of multiferroics in the film is attributed to oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.

     

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