Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

Shu-huei Hsieh, Wen-jauh Chen, Pei-i Wei, Jiing-herng Lee

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    Shu-huei Hsieh, Wen-jauh Chen, Pei-i Wei, and Jiing-herng Lee, Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method, Int. J. Miner. Metall. Mater., 16(2009), No. 1, pp.101-107. https://dx.doi.org/10.1016/S1674-4799(09)60017-0
    Shu-huei Hsieh, Wen-jauh Chen, Pei-i Wei, and Jiing-herng Lee, Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method, Int. J. Miner. Metall. Mater., 16(2009), No. 1, pp.101-107. https://dx.doi.org/10.1016/S1674-4799(09)60017-0
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    Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

    • Department of Materials Science and Engineering, Huwei Institute of Technology

    • Graduate Institute of Materials Science, Yunlin University of Science and Technology

      通信作者:

      Shu-huei Hsieh E-mail: shhsieh@nfu.edu.tw

    中文摘要

    The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature, current density, CuCl2 concentration, FeCl3 concentration, H2SeO3 concentration, TEA amount, pH value, and deposition time. The experiments were carried out according to an L18(2137) table An X-ray diffractometer (XRD) and a scanning electron microscope (SEM) were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane (112) parallel to the substrate surface. The optimum parameters are as follows: current density, 7 mA/cm 2 ; CuCl2 concentration, 10 mM; FeCl3 concentration, 50 mM; H2SeO3 concentration, 15 mM; TEA amount, 0 mL; pH value, 1.65; deposition time, 10 min; and annealing temperature, 500℃.

     

    Materials

    Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

    Author Affilications

      • Department of Materials Science and Engineering, Huwei Institute of Technology

      • Graduate Institute of Materials Science, Yunlin University of Science and Technology

    • Received: 14 February 2008;
    The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature, current density, CuCl2 concentration, FeCl3 concentration, H2SeO3 concentration, TEA amount, pH value, and deposition time. The experiments were carried out according to an L18(2137) table An X-ray diffractometer (XRD) and a scanning electron microscope (SEM) were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane (112) parallel to the substrate surface. The optimum parameters are as follows: current density, 7 mA/cm 2 ; CuCl2 concentration, 10 mM; FeCl3 concentration, 50 mM; H2SeO3 concentration, 15 mM; TEA amount, 0 mL; pH value, 1.65; deposition time, 10 min; and annealing temperature, 500℃.

     

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