Effect of Fe metal on the growth of silicon oxide nanowires

Wei-long Liu; Shu-huei Hsieh; Ching He Chen; Wen-jauh Chen

doi:10.1016/S1674-4799(09)60057-1

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Wei-long Liu, Shu-huei Hsieh, Ching He Chen, and Wen-jauh Chen, Effect of Fe metal on the growth of silicon oxide nanowires, Int. J. Miner. Metall. Mater., 16(2009), No. 3, pp.317-321. https://dx.doi.org/10.1016/S1674-4799(09)60057-1

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Effect of Fe metal on the growth of silicon oxide nanowires

摘要: Silicon oxide (SiO_x) nanowires are generally grown on Si substrate under the catalysis of Au in N₂ atmosphere at elevated temperatures. Because the price of Au metal is quite high, Fe metal is then used to replace a part of Au for catalyzing the growth of SiO_x nanowires. The results show that the Fe film can be used as the diffusion barrier of Au. SiO_x nanowires are grown on Au/Fe/Si substrate at 1030℃. Under the catalysis of Fe/Au, the efficiency for the growth of SiO_x nanowires is promoted.

Effect of Fe metal on the growth of silicon oxide nanowires

Abstract: Silicon oxide (SiO_x) nanowires are generally grown on Si substrate under the catalysis of Au in N₂ atmosphere at elevated temperatures. Because the price of Au metal is quite high, Fe metal is then used to replace a part of Au for catalyzing the growth of SiO_x nanowires. The results show that the Fe film can be used as the diffusion barrier of Au. SiO_x nanowires are grown on Au/Fe/Si substrate at 1030℃. Under the catalysis of Fe/Au, the efficiency for the growth of SiO_x nanowires is promoted.

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