摘要:
The electromigration behavior of eutectic SnAg solder reaction couples was studied at various temperature (25 and 120℃ when the current density was held constant at 104 A/cm
2 or 5×10
3 A/cm
2. Under the current density of 104 A/cm
2, scallop type Cu
6Sn
5 spalls and migrates towards the direction of electron flow at room ambient temperature (25℃), but transforms to layer type Cu
3Sn and leaves Kirkendall voids in it at high ambient temperature (120℃). Under the current density of 5×10
3 A/cm
2 plus room ambient temperature, no obvious directional migration of metal atoms/ions is found. Instead, the thermal stress induced by mismatch of dissimilar materials causes the formation of superficial valley at both interfaces. However, when the ambient temperature increases to 120℃, the mobility of metal atoms/ions is enhanced, and then the grains rotate due to the anisotropic property of β-Sn.