Guang-chen Xu, Fu Guo, and Wan-rong Zhu, Electromigration in eutectic SnAg solder reaction couples with various ambient temperatures and current densities, Int. J. Miner. Metall. Mater., 16(2009), No. 6, pp. 685-690. https://doi.org/10.1016/S1674-4799(10)60013-1
Cite this article as:
Guang-chen Xu, Fu Guo, and Wan-rong Zhu, Electromigration in eutectic SnAg solder reaction couples with various ambient temperatures and current densities, Int. J. Miner. Metall. Mater., 16(2009), No. 6, pp. 685-690. https://doi.org/10.1016/S1674-4799(10)60013-1
Guang-chen Xu, Fu Guo, and Wan-rong Zhu, Electromigration in eutectic SnAg solder reaction couples with various ambient temperatures and current densities, Int. J. Miner. Metall. Mater., 16(2009), No. 6, pp. 685-690. https://doi.org/10.1016/S1674-4799(10)60013-1
Citation:
Guang-chen Xu, Fu Guo, and Wan-rong Zhu, Electromigration in eutectic SnAg solder reaction couples with various ambient temperatures and current densities, Int. J. Miner. Metall. Mater., 16(2009), No. 6, pp. 685-690. https://doi.org/10.1016/S1674-4799(10)60013-1
The electromigration behavior of eutectic SnAg solder reaction couples was studied at various temperature (25 and 120℃ when the current density was held constant at 104 A/cm2 or 5×103 A/cm2. Under the current density of 104 A/cm2, scallop type Cu6Sn5 spalls and migrates towards the direction of electron flow at room ambient temperature (25℃), but transforms to layer type Cu3Sn and leaves Kirkendall voids in it at high ambient temperature (120℃). Under the current density of 5×103 A/cm2 plus room ambient temperature, no obvious directional migration of metal atoms/ions is found. Instead, the thermal stress induced by mismatch of dissimilar materials causes the formation of superficial valley at both interfaces. However, when the ambient temperature increases to 120℃, the mobility of metal atoms/ions is enhanced, and then the grains rotate due to the anisotropic property of β-Sn.
The electromigration behavior of eutectic SnAg solder reaction couples was studied at various temperature (25 and 120℃ when the current density was held constant at 104 A/cm2 or 5×103 A/cm2. Under the current density of 104 A/cm2, scallop type Cu6Sn5 spalls and migrates towards the direction of electron flow at room ambient temperature (25℃), but transforms to layer type Cu3Sn and leaves Kirkendall voids in it at high ambient temperature (120℃). Under the current density of 5×103 A/cm2 plus room ambient temperature, no obvious directional migration of metal atoms/ions is found. Instead, the thermal stress induced by mismatch of dissimilar materials causes the formation of superficial valley at both interfaces. However, when the ambient temperature increases to 120℃, the mobility of metal atoms/ions is enhanced, and then the grains rotate due to the anisotropic property of β-Sn.
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