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Yongping Zhang, Yousong Gu, Xiangrong Chang, Zhongzhuo Tian, Dongxia Shi, Xiufang Zhanga, and Lei Yuan, Carbon Nitride Films Deposited on Pt Substrates by Microwave Plasma Chemical Vapor Deposition, J. Univ. Sci. Technol. Beijing , 7(2000), No. 1, pp.42-44.
Yongping Zhang, Yousong Gu, Xiangrong Chang, Zhongzhuo Tian, Dongxia Shi, Xiufang Zhanga, and Lei Yuan, Carbon Nitride Films Deposited on Pt Substrates by Microwave Plasma Chemical Vapor Deposition, J. Univ. Sci. Technol. Beijing , 7(2000), No. 1, pp.42-44.
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Carbon Nitride Films Deposited on Pt Substrates by Microwave Plasma Chemical Vapor Deposition

摘要: Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor deposition (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C3N4 and β-C3N4. The films are a mixture of α-C3N4 and β-C3N4. The observed Raman and FT-IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.

 

Carbon Nitride Films Deposited on Pt Substrates by Microwave Plasma Chemical Vapor Deposition

Abstract: Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor deposition (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C3N4 and β-C3N4. The films are a mixture of α-C3N4 and β-C3N4. The observed Raman and FT-IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.

 

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