摘要:
NiO
x/Ni
81Fe
19 and Co/AlO
x/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (
Hex) between NiO
x and Ni
81Fe
19 as a function of NiO
x oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlO
x/Co were also analyzed. It is found that the
Hex of NiO
x/Ni
81Fe
19 films only depends on Ni
2+ but not on Ni
3+ or Ni. The bottom Co can be completely covered by depositing an Al layer thicker than 2.0 nm. The oxide layer was Al
2O
3, and its thickness was 1.15 mn.