摘要:
NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni
90Cu
10 target. A DC bias voltage
Us of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of
Us. The application of
Us is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.