Hong Qiu and Mituru Hashimoto, Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001), J. Univ. Sci. Technol. Beijing, 7(2000), No. 3, pp. 218-221.
Cite this article as:
Hong Qiu and Mituru Hashimoto, Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001), J. Univ. Sci. Technol. Beijing, 7(2000), No. 3, pp. 218-221.
Hong Qiu and Mituru Hashimoto, Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001), J. Univ. Sci. Technol. Beijing, 7(2000), No. 3, pp. 218-221.
Citation:
Hong Qiu and Mituru Hashimoto, Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001), J. Univ. Sci. Technol. Beijing, 7(2000), No. 3, pp. 218-221.
Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, Beijing 100083, China
Applied Science School, University of Science and Technology Beijing, Beijing 100083, China
Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
中文摘要
NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage Us of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of Us. The application of Us is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.
NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage Us of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of Us. The application of Us is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.
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