Cite this article as:

WANG JIANJUN, LU FANXIU, and YANG BAOXIONG, DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD, J. Univ. Sci. Technol. Beijing , 2(1995), No. 2, pp.79-83.
WANG JIANJUN, LU FANXIU, and YANG BAOXIONG, DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD, J. Univ. Sci. Technol. Beijing , 2(1995), No. 2, pp.79-83.
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金刚石薄膜的低温沉积研究

摘要: 采用微波等离子体辅助化学气相沉积法成功地在280~445℃沉积了金刚石薄膜。发现低温沉积的金刚石薄膜的形核密度随着温度的降低可得到极大提高;表面粗糙度随着温度的降低可得到大幅度的降低。

 

DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD

Abstract: Low-temperature deposition of diamond thin films in the range of 280~445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280~445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.

 

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