Atomic scale KMC simulation of 100 oriented CVD diamond film growth underlow substrate temperature―Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

Xizhong An; Yu Zhang; Guoquan Liu; Xiangge Qin; Fuzhong Wang; Shengxin Liu

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Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang, and Shengxin Liu, Atomic scale KMC simulation of {100} oriented CVD diamond film growth underlow substrate temperature―Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems, J. Univ. Sci. Technol. Beijing , 9(2002), No. 6, pp.453-457.

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Atomic scale KMC simulation of 100 oriented CVD diamond film growth underlow substrate temperature―Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

摘要: The growth of 100-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale,The results were compared both in Cl-containing systems and in C-H system as follows:(1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness;(2) Aomic Cl takes an active role for the growth of diamond film at low temperatues;(3)100-oriented diamond film cannot deposit under single carbon insertion mechanism,which disagrees with the predictions before;(4) The explanation of the exact role of atomic Cl is not provided in the simulation results.

Atomic scale KMC simulation of 100 oriented CVD diamond film growth underlow substrate temperature―Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

Abstract: The growth of 100-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale,The results were compared both in Cl-containing systems and in C-H system as follows:(1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness;(2) Aomic Cl takes an active role for the growth of diamond film at low temperatues;(3)100-oriented diamond film cannot deposit under single carbon insertion mechanism,which disagrees with the predictions before;(4) The explanation of the exact role of atomic Cl is not provided in the simulation results.

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