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Research Article

Tunable fabrication of single-crystalline CsPbI3 nanobelt and its application as photodetectors

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  • Received: 20 June 2020Revised: 20 August 2020Accepted: 25 August 2020Available online: 27 August 2020
  • Recently, lead halide perovskites have received much attention and be a candidate material for various optoelectronic field for their high performance as light absorbers. Here we report the growth of CsPbI3 nanoblet via a solution process. The single-crystalline CsPbI3 nanobelt have a high yield with uniform in morphology by controlling the PbI2 amount. The single-crystalline CsPbI3 nanobelt possess a mean width, length and thickness of 100 nm, 5 µm and 20 nm respectively. Based on this, the photodetectors (PDs) based on individual CsPbI3 nanobelt were constructed and have a good performance with an external quantum efficiency and responsivity of 2.39×105 % and 770 A·W-1, respectively. More importantly, the PDs show a high detectivity up to 3.12×1012 Jones, which is on par with that of Si PDs. It exhibits as a promising candidate applied in various optoelectronic nanodevices.
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Tunable fabrication of single-crystalline CsPbI3 nanobelt and its application as photodetectors

  • Corresponding author:

    Xin-mei Hou    E-mail: houxinmeiustb@ustb.edu.cn

  • Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing 100083, China

Abstract: Recently, lead halide perovskites have received much attention and be a candidate material for various optoelectronic field for their high performance as light absorbers. Here we report the growth of CsPbI3 nanoblet via a solution process. The single-crystalline CsPbI3 nanobelt have a high yield with uniform in morphology by controlling the PbI2 amount. The single-crystalline CsPbI3 nanobelt possess a mean width, length and thickness of 100 nm, 5 µm and 20 nm respectively. Based on this, the photodetectors (PDs) based on individual CsPbI3 nanobelt were constructed and have a good performance with an external quantum efficiency and responsivity of 2.39×105 % and 770 A·W-1, respectively. More importantly, the PDs show a high detectivity up to 3.12×1012 Jones, which is on par with that of Si PDs. It exhibits as a promising candidate applied in various optoelectronic nanodevices.

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