Cite this article as: |
Wakul Bumrugsan, Kritsada Hongsith, Vasan Yarangsi, Pisith Kumnorkeaw, Sukrit Sucharitakul, Surachet Phaduangdhitidhada, and Supab Choopun, Efficiency enhancement of Cs0.1(CH3NH3)0.9PbI3 perovskite solar cell by surface passivation using iso-butyl ammonium iodide, Int. J. Miner. Metall. Mater.,(2021). https://doi.org/10.1007/s12613-021-2382-3 |
Efficiency enhancement of Cs0.1(CH3NH3)0.9PbI3 solar cell devices was performed by using iso-butyl ammonium iodide (IBA) passivated on Cs0.1(CH3NH3)0.9PbI3 films. The n-i-p structure of perovskite solar cell devices was fabricated with the structure of FTO/SnO2/Cs0.1(CH3NH3)0.9PbI3 and IBA/Spiro-OMeTAD/Ag. The effect of different weights of IBA passivated on Cs-doped PSCs was systematically investigated and compared with non-passivated devices. It was found that the 5mg IBA-passivated devices exhibited a high PCE of 15.4% higher than 12.6% of non-IBA-passivated devices. The improvement of photovoltaic parameters of the 5 mg IBA-passivated devices can be clearly observed compared to the Cs-doped device. The better performance of the IBA-passivated device can be confirmed by the reduction of PbI2 phase in the crystal structure, lower charge recombination rate, lower charge transfer resistance, and improved contact angle of perovskite films. Therefore, IBA passivation on Cs0.1(CH3NH3)0.9PbI3 is a promising technique to improve the efficiency of Cs-doped perovskite solar cells.