|Cite this article as:|
|Jiaxin Li, Hao Yuan, Wenjie Zhang, Ruijie Zhu, and Zhengbo Jiao, Construction of BiVO4/BiOCl@C Z-scheme heterojunction for enhanced photoelectrochemical performance, Int. J. Miner. Metall. Mater.,(2022). https://doi.org/10.1007/s12613-022-2481-9|
A Z-scheme heterostructure of Mo, W co-doped BiVO4 (Mo, W: BVO/BiOCl@C) was fabricated by a simple solid solution drying and calcination (SSDC) method. The heterostructure is characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), etc. Under visible light irradiation, Mo, W: BVO/BiOCl@C heterostructure exhibits excellent photoelectrochemical capability compared with other as-prepared samples. The photocurrent density and the incident photon-to-electron conversion efficiency (IPCE) is about 5.4 and 9.0 times higher than that of pure BiVO4, respectively. The enhancement of the photoelectrochemical performance can be attributed to the construct of Z-scheme system, which is deduced from the radical trapping experiments. The Mo, W: BVO/BiOCl@C Z-scheme heterojunction enhances the visible-light absorption and reduces the recombination rate of charge carriers. This work provides an effective strategy to construct Z-scheme photoelectrodes for the application of PEC water splitting.