Asha Dahiya, O. P. Thakur, J. K. Juneja, Sangeeta Singh,  and Dipti, Comparative study of 2mol% Li- and Mn-substituted lead-free potassium sodium niobate ceramics, Int. J. Miner. Metall. Mater., 21(2014), No. 12, pp. 1241-1246. https://doi.org/10.1007/s12613-014-1033-3
Cite this article as:
Asha Dahiya, O. P. Thakur, J. K. Juneja, Sangeeta Singh,  and Dipti, Comparative study of 2mol% Li- and Mn-substituted lead-free potassium sodium niobate ceramics, Int. J. Miner. Metall. Mater., 21(2014), No. 12, pp. 1241-1246. https://doi.org/10.1007/s12613-014-1033-3

Comparative study of 2mol% Li- and Mn-substituted lead-free potassium sodium niobate ceramics

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  • Corresponding author:

    Asha Dahiya    E-mail: ashadh8@gmail.com

  • Received: 10 February 2014Revised: 21 May 2014Accepted: 28 May 2014
  • The effect of Li and Mn substitution on the dielectric, ferroelectric and piezoelectric properties of lead free K0.5Na0.5NbO3 (KNN) was investigated. Samples were prepared using a conventional solid state reaction method. The sintering temperature for all the samples was 1050°C. The optimum doping concentration for the enhancement of different properties without the introduction of any other co-dopants such as Ti, Sb, and La was investigated. X-ray diffraction analysis confirmed that all the samples crystallize in a single phase perovskite structure. The dielectric properties were investigated as a function of temperature and applied electric field frequency. Compared with Li-substituted KNN (KLNN), Mn-substituted KNN (KMNN) exhibited a higher dielectric constant ɛmax (i.e., 4840) at its critical transition temperature Tc (i.e., 421°C) along with a lower value of tangent loss at 10 kHz and greater values of saturation polarisation Ps (i.e., 20.14 μC/cm2) and remnant polarisation Pr (i.e., 15.48 μC/cm2). The piezoelectric constant (d33) of KMNN was 178 pC/N, which is comparable to that of lead-based hard ceramics. The results presented herein suggest that B-site or Mn substitution at the optimum concentration results in good enhancement of different properties required for materials used in memory devices and other applications.
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