Recent progress in diamond-based MOSFETs

Xiao-lu Yuan; Yu-ting Zheng; Xiao-hua Zhu; Jin-long Liu; Jiang-wei Liu; Cheng-ming Li; Peng Jin; Zhan-guo Wang

doi:10.1007/s12613-019-1843-4

Volume 26 Issue 10

Oct. 2019

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Article Navigation > International Journal of Minerals, Metallurgy and Materials > 2019 > 26(10): 1195-1205

Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin, and Zhan-guo Wang, Recent progress in diamond-based MOSFETs, Int. J. Miner. Metall. Mater., 26(2019), No. 10, pp. 1195-1205. https://doi.org/10.1007/s12613-019-1843-4

Cite this article as:

Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin, and Zhan-guo Wang, Recent progress in diamond-based MOSFETs, Int. J. Miner. Metall. Mater., 26(2019), No. 10, pp. 1195-1205. https://doi.org/10.1007/s12613-019-1843-4

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Invited Review

Recent progress in diamond-based MOSFETs

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Corresponding authors:
Cheng-ming Li E-mail: chengmli@mater.ustb.edu.cn

Peng Jin E-mail: pengjin@semi.ac.cn
Received: 13 January 2019; Revised: 22 March 2019; Accepted: 12 May 2019

Abstract

Abstract

Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are introduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.
- diamond;
- MOSFETs;
- semiconductor;
- carrier mobility;
- doping

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