Flexible broadband WS<sub>2</sub>/Si optical position-sensitive detector with high sensitivity and fast speed

Yunjie Liu; Yupeng Wu; Fuhai Guo; Yingming Liu; Shirong Zhao; Siqi Li; Weizhuo Yu; Lanzhong Hao

doi:10.1007/s12613-023-2600-2

Volume 30 Issue 6

Jun. 2023

Turn off MathJax

Article Contents

Article Navigation > International Journal of Minerals, Metallurgy and Materials > 2023 > 30(6): 1217-1224

Yunjie Liu, Yupeng Wu, Fuhai Guo, Yingming Liu, Shirong Zhao, Siqi Li, Weizhuo Yu, and Lanzhong Hao, Flexible broadband WS₂/Si optical position-sensitive detector with high sensitivity and fast speed, Int. J. Miner. Metall. Mater., 30(2023), No. 6, pp. 1217-1224. https://doi.org/10.1007/s12613-023-2600-2

Cite this article as:

Yunjie Liu, Yupeng Wu, Fuhai Guo, Yingming Liu, Shirong Zhao, Siqi Li, Weizhuo Yu, and Lanzhong Hao, Flexible broadband WS2/Si optical position-sensitive detector with high sensitivity and fast speed, Int. J. Miner. Metall. Mater., 30(2023), No. 6, pp. 1217-1224. https://doi.org/10.1007/s12613-023-2600-2

Citation:

PDF( 3435 KB)

Research Article

Flexible broadband WS₂/Si optical position-sensitive detector with high sensitivity and fast speed

+ Author Affiliations

Corresponding author:
Lanzhong Hao E-mail: haolanzhong@upc.edu.cn
Received: 2 August 2022; Revised: 6 January 2023; Accepted: 10 January 2023; Available online: 11 January 2023

Abstract

Abstract

Si-based optical position-sensitive detectors (PSDs) have stimulated the interest of researchers due to their wide range of practical applications. However, due to the rigidity and fragility of Si crystals, the applications of flexible PSDs have been limited. Therefore, we presented a flexible broadband PSD based on a WS₂/Si heterostructure for the first time. A scalable sputtering method was used to deposit WS₂ thin films onto the etched ultrathin crystalline Si surface. The fabricated flexible PSD device has a broad spectral response in the wavelength range of 450–1350 nm, with a high position sensitivity of ~539.8 mV·mm⁻¹ and a fast response of 2.3 μs, thanks to the strong light absorption, the built-in electrical field at the WS₂/Si interface, and facilitated transport. Furthermore, mechanical-bending tests revealed that after 200 mechanical-bending cycles, the WS₂/Si PSDs have excellent mechanical flexibility, stability, and durability, demonstrating the great potential in wearable PSDs with competitive performance.
- flexible;
- position-sensitive detectors;
- WS₂ heterostructure;
- broad spectral response;
- high sensitivity

FullText(HTML)

Supplements(1)

Supplementary Information-s12613-023-2600-2.docx

References(45)

References

[1]	J.T. Wallmark, A new semiconductor photocell using lateral photoeffect, Proc. IRE, 45(1957), No. 4, p. 474. doi: 10.1109/JRPROC.1957.278435
[2]	N. Tabatabaie, M.H. Meynadier, R.E. Nahory, J.P. Harbison, and L.T. Florez, Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures, Appl. Phys. Lett., 55(1989), No. 8, p. 792. doi: 10.1063/1.101762
[3]	J.P. Cascales, I. Martínez, D. Díaz, J.A. Rodrigo, and F.G. Aliev, Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films, Appl. Phys. Lett., 104(2014), No. 23, art. No. 231118. doi: 10.1063/1.4882701
[4]	S. Liu, C.Q. Yu, and H. Wang, Colossal lateral photovoltaic effect observed in metal-oxide-semiconductor structure of Ti/TiO₂/Si, IEEE Electron Device Lett., 33(2012), No. 3, p. 414. doi: 10.1109/LED.2011.2181325
[5]	J.Y. Du, P.F. Zhu, P. Song, et al., Two-dimensional lateral photovoltaic effect in MOS structure of Ti–SiO₂–Si, J. Phys. D: Appl. Phys., 54(2021), No. 40, art. No. 405105. doi: 10.1088/1361-6463/ac12f6
[6]	X.Y. Dong, D.Y. Zheng, J. Lu, Y.R. Niu, and H. Wang, Efficient hot electron extraction in Ag–Cu/TiO₂ for high performance lateral photovoltaic effect, IEEE Electron Device Lett., 42(2021), No. 10, p. 1500. doi: 10.1109/LED.2021.3106740
[7]	S. Liu, H. Wang, Y.J. Yao, L. Chen, and Z.L. Wang, Lateral photovoltaic effect observed in nano Au film covered two-dimensional colloidal crystals, Appl. Phys. Lett., 104(2014), No. 11, art. No. 111110. doi: 10.1063/1.4869223
[8]	L. Du and H. Wang, Infrared laser induced lateral photovoltaic effect observed in Cu₂O nanoscale film, Opt. Express, 18(2010), No. 9, p. 9113. doi: 10.1364/OE.18.009113
[9]	C.Q. Yu, H. Wang, S.Q. Xiao, and Y.X. Xia, Direct observation of lateral photovoltaic effect in nano-metal-films, Opt. Express, 17(2009), No. 24, p. 21712. doi: 10.1364/OE.17.021712
[10]	C. Xie, C. Mak, X.M. Tao, and F. Yan, Photodetectors based on two-dimensional layered materials beyond graphene, Adv. Funct. Mater., 27(2017), No. 19, art. No. 1603886. doi: 10.1002/adfm.201603886
[11]	H.H. Yu, Z.H. Cao, Z. Zhang, X.K. Zhang, and Y. Zhang, Flexible electronics and optoelectronics of 2D van der Waals materials, Int. J. Miner. Metall. Mater., 29(2022), No. 4, p. 671. doi: 10.1007/s12613-022-2426-3
[12]	W.H. Wu, Q. Zhang, X. Zhou, et al., Self-powered photovoltaic photodetector established on lateral monolayer MoS₂-WS₂ heterostructures, Nano Energy, 51(2018), p. 45. doi: 10.1016/j.nanoen.2018.06.049
[13]	H.S. Kim, M. Patel, J. Kim, and M.S. Jeong, Growth of wafer-scale standing layers of WS₂ for self-biased high-speed UV-visible-NIR optoelectronic devices, ACS Appl. Mater. Interfaces, 10(2018), No. 4, p. 3964. doi: 10.1021/acsami.7b16397
[14]	P. Gant, P. Huang, D. Pérez de Lara, D. Guo, R. Frisenda, and A. Castellanos-Gomez, A strain tunable single-layer MoS₂ photodetector, Mater. Today, 27(2019), p. 8. doi: 10.1016/j.mattod.2019.04.019
[15]	J.X. Guo, S.D. Li, Z.B. He, et al., Near-infrared photodetector based on few-layer MoS₂ with sensitivity enhanced by localized surface plasmon resonance, Appl. Surf. Sci., 483(2019), p. 1037. doi: 10.1016/j.apsusc.2019.04.044
[16]	J.W. Kang, C. Zhang, K.J. Cao, et al., High-performance light trajectory tracking and image sensing devices based on a γ-In₂Se₃/GaAs heterostructure, J. Mater. Chem. C, 8(2020), No. 39, p. 13762. doi: 10.1039/D0TC03872E
[17]	M.R. Ma, H.H. Chen, K.N. Zhou, et al., Multilayered PtSe₂/pyramid-Si heterostructure array with light confinement effect for high-performance photodetection, image sensing and light trajectory tracking applications, J. Mater. Chem. C, 9(2021), No. 8, p. 2823. doi: 10.1039/D0TC05701K
[18]	R.D. Cong, S. Qiao, J.H. Liu, et al., Ultrahigh, ultrafast, and self-powered visible-near-infrared optical position-sensitive detector based on a CVD-prepared vertically standing few-layer MoS₂/Si heterojunction, Adv. Sci., 5(2018), No. 2, art. No. 1700502. doi: 10.1002/advs.201700502
[19]	Y.T. Zheng, J.J. Wei, J.L. Liu, et al., Carbon materials: The burgeoning promise in electronics, Int. J. Miner. Metall. Mater., 29(2022), No. 3, p. 404. doi: 10.1007/s12613-021-2358-3
[20]	C.S. Solanki, R.R. Bilyalov, J. Poortmans, J. Nijs, and R. Mertens, Porous silicon layer transfer processes for solar cells, Sol. Energy Mater. Sol. Cells, 83(2004), No. 1, p. 101. doi: 10.1016/j.solmat.2004.02.016
[21]	T.P. Jiao, D.P. Wei, J. Liu, et al., Flexible solar cells based on graphene-ultrathin silicon Schottky junction, RSC Adv., 5(2015), No. 89, p. 73202. doi: 10.1039/C5RA13488A
[22]	X.K. Li, M. Mariano, L. McMillon-Brown, et al., Charge transfer from carbon nanotubes to silicon in flexible carbon nanotube/silicon solar cells, Small, 13(2017), No. 48, art. No. 1702387. doi: 10.1002/smll.201702387
[23]	I. Hwang, H.D. Um, B.S. Kim, M. Wober, and K. Seo, Flexible crystalline silicon radial junction photovoltaics with vertically aligned tapered microwires, Energy Environ. Sci., 11(2018), No. 3, p. 641. doi: 10.1039/C7EE03340K
[24]	K.Q. Ruan, K. Ding, Y.M. Wang, et al., Flexible graphene/silicon heterojunction solar cells, J. Mater. Chem. A, 3(2015), No. 27, p. 14370. doi: 10.1039/C5TA03652F
[25]	S.Y. Saha, M.M. Hilali, E.U. Onyegam, et al., Single heterojunction solar cells on exfoliated flexible ~25 μm thick mono-crystalline silicon substrates, Appl. Phys. Lett., 102(2013), No. 16, art. No. 163904. doi: 10.1063/1.4803174
[26]	Y.J. Dai, X.F. Wang, W.B. Peng, et al., Self-powered Si/CdS flexible photodetector with broadband response from 325 to 1550 nm based on pyro-phototronic effect: An approach for photosensing below bandgap energy, Adv. Mater., 30(2018), No. 9, art. No. 1705893. doi: 10.1002/adma.201705893
[27]	D.H. Li, H. Zheng, Z.Y. Wang, et al., Dielectric functions and critical points of crystalline WS₂ ultrathin films with tunable thickness, Phys. Chem. Chem. Phys., 19(2017), No. 19, p. 12022. doi: 10.1039/C7CP00660H
[28]	C.Y. Lan, C. Li, S. Wang, et al., Zener tunneling and photoresponse of a WS₂/Si van der waals heterojunction, ACS Appl. Mater. Interfaces, 8(2016), No. 28, p. 18375. doi: 10.1021/acsami.6b05109
[29]	L.Z. Hao, H. Liu, H.Y. Xu, et al., Flexible Pd-WS₂/Si heterojunction sensors for highly sensitive detection of hydrogen at room temperature, Sens. Actuators B, 283(2019), p. 740. doi: 10.1016/j.snb.2018.12.062
[30]	S. Liu, X. Xie, and H. Wang, Lateral photovoltaic effect and electron transport observed in Cr nano-film, Opt. Express, 22(2014), No. 10, p. 11627. doi: 10.1364/OE.22.011627
[31]	C. Hu, X.J. Wang, P. Miao, et al., Origin of the ultrafast response of the lateral photovoltaic effect in amorphous MoS₂/Si junctions, ACS Appl. Mater. Interfaces, 9(2017), No. 21, p. 18362. doi: 10.1021/acsami.7b04298
[32]	S. Qiao, K.Y. Feng, Z. Li, G.S. Fu, and S.F. Wang, Ultrahigh, ultrafast and large response size visible-near-infrared optical position sensitive detectors based on CIGS structures, J. Mater. Chem. C, 5(2017), No. 20, p. 4915. doi: 10.1039/C7TC01462G
[33]	T.T. Xu, Y.P. Han, L. Lin, et al., Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films, J. Alloys Compd., 790(2019), p. 941. doi: 10.1016/j.jallcom.2019.03.293
[34]	S. Qiao, J.H. Chen, J.H. Liu, N. Fu, G.Y. Yan, and S.F. Wang, Distance-dependent lateral photovoltaic effect in a-Si:H(p)/a-Si:H(i)/c-Si(n) structure, Appl. Surf. Sci., 356(2015), p. 732. doi: 10.1016/j.apsusc.2015.08.144
[35]	Y. Yao, Z.W. Jin, Y.H. Chen, et al., Graphdiyne-WS₂ 2D-Nanohybrid electrocatalysts for high-performance hydrogen evolution reaction, Carbon, 129(2018), p. 228. doi: 10.1016/j.carbon.2017.12.024
[36]	X.J. Wang, B.Q. Song, M.X. Huo, et al., Fast and sensitive lateral photovoltaic effects in Fe₃O₄/Si Schottky junction, RSC Adv., 5(2015), No. 80, p. 65048. doi: 10.1039/C5RA11872G
[37]	Y.G. Du, Q.Z. Xue, Z.Y. Zhang, F.J. Xia, J.P. Li, and Z.D. Han, Hydrogen gas sensing properties of Pd/a-C:Pd/SiO₂/Si structure at room temperature, Sens. Actuators B, 186(2013), p. 796. doi: 10.1016/j.snb.2013.06.067
[38]	P. Sharma, R. Bhardwaj, A. Kumar, and S. Mukherjee, Trap assisted charge multiplication enhanced photoresponse of Li–P codoped p-ZnO/n-Si heterojunction ultraviolet photodetectors, J. Phys. D: Appl. Phys., 51(2018), No. 1, art. No. 015103. doi: 10.1088/1361-6463/aa98fb
[39]	X.J. Wang, X.F. Zhao, C. Hu, et al., Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction, Appl. Phys. Lett., 109(2016), No. 2, art. No. 023502. doi: 10.1063/1.4955480
[40]	L.Z. Hao, Y.J. Liu, Z.D. Han, Z.J. Xu, and J. Zhu, Giant lateral photovoltaic effect in MoS₂/SiO₂/Si p-i-n junction, J. Alloys Compd., 735(2018), p. 88. doi: 10.1016/j.jallcom.2017.11.094
[41]	T. Yang, Y.P. Zheng, K.C. Chou, and X.M. Hou, Tunable fabrication of single-crystalline CsPbI₃ nanobelts and their application as photodetectors, Int. J. Miner. Metall. Mater., 28(2021), No. 6, p. 1030. doi: 10.1007/s12613-020-2173-2
[42]	J. Mao, Y.Q. Yu, L. Wang, et al., Ultrafast, broadband photodetector based on MoSe₂/silicon heterojunction with vertically standing layered structure using graphene as transparent electrode, Adv. Sci., 3(2016), No. 11, art. No. 1600018. doi: 10.1002/advs.201600018
[43]	Y. Zhang, Y. Zhang, T. Yao, C. Hu, Y. Sui, and X.J. Wang, Ultrahigh position sensitivity and fast optical relaxation time of lateral photovoltaic effect in Sb₂Se₃/p-Si junctions, Opt. Express, 26(2018), No. 26, p. 34214. doi: 10.1364/OE.26.034214
[44]	S. Qiao, M.J. Chen, Y. Wang, et al., Ultrabroadband, large sensitivity position sensitivity detector based on a Bi₂Te_2.7Se_0.3/Si heterojunction and its performance improvement by pyro-phototronic effect, Adv. Electron Mater., 5(2019), No. 12, art. No. 1900786. doi: 10.1002/aelm.201900786
[45]	T.H. Nguyen, T. Nguyen, A.R.M. Foisal, et al., Generation of a charge carrier gradient in a 3C–SiC/Si heterojunction with asymmetric configuration, ACS Appl. Mater. Interfaces, 13(2021), No. 46, p. 55329. doi: 10.1021/acsami.1c15942