Force and impulse multi-sensor based on flexible gate dielectric field effect transistor

Chao Tan; Junling Lü; Chunchi Zhang; Dong Liang; Lei Yang; Zegao Wang

doi:10.1007/s12613-024-2968-7

Volume 32 Issue 1

Jan. 2025

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Article Navigation > International Journal of Minerals, Metallurgy and Materials > 2025 > 32(1): 214-220

Chao Tan, Junling Lü, Chunchi Zhang, Dong Liang, Lei Yang, and Zegao Wang, Force and impulse multi-sensor based on flexible gate dielectric field effect transistor, Int. J. Miner. Metall. Mater., 32(2025), No. 1, pp. 214-220. https://doi.org/10.1007/s12613-024-2968-7

Cite this article as:

Chao Tan, Junling Lü, Chunchi Zhang, Dong Liang, Lei Yang, and Zegao Wang, Force and impulse multi-sensor based on flexible gate dielectric field effect transistor, Int. J. Miner. Metall. Mater., 32(2025), No. 1, pp. 214-220. https://doi.org/10.1007/s12613-024-2968-7

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Research Article

Force and impulse multi-sensor based on flexible gate dielectric field effect transistor

+ Author Affiliations

Corresponding author:
Zegao Wang E-mail: zegao@scu.edu.cn
Received: 11 January 2024; Revised: 1 July 2024; Accepted: 3 July 2024; Available online: 5 July 2024

Abstract

Abstract

Nowadays, force sensors play an important role in industrial production, electronic information, medical health, and many other fields. Two-dimensional material-based filed effect transistor (2D-FET) sensors are competitive with nano-level size, lower power consumption, and accurate response. However, few of them has the capability of impulse detection, which is a path function, expressing the cumulative effect of the force on the particle over a period of time. Herein, we fabricated the flexible polymethyl methacrylate (PMMA) gate dielectric MoS₂-FET for force and impulse sensor application. We systematically investigated the responses of the sensor to constant force and varying forces, and achieved the conversion factors of the drain current signals (I_ds) to the detected impulse ($ \overrightarrow{I} $). The applied force was detected and recorded by I_ds with a low power consumption of ~30 nW. The sensitivity of the device can reach ~8000% and the 4 × 1 sensor array is able to detect and locate the normal force applied on it. Moreover, there was almost no performance loss for the device as left in the air for two months.
- flexible gate dielectric transistor;
- force sensor;
- impulse sensor;
- force sensor array

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