Synthesis diamond films on high entropy alloys by chemical vapor deposition: microstructure, growth behavior and corrosion

Hetero-epitaxy of diamond films has received a widespread attention. However, it had hindered the application of diamond due to the differences between diamond and heterogeneous substrates in property and structure. In this paper, diamond films were grown on high entropy alloys (HEAs) substrates by using microwave plasma chemical vapor deposition. It was found that the diamond films were continuous and uniform on HEAs substrates. The mixed carbides were identified by X-ray diffraction, and the quality of diamond films were examined by Raman analysis. Moreover, the corrosion behaviour revealed that Dia./TiZrHfMo had the excellent electrochemical stability and corrosion resistance with a corrosion potential value of -0.169 V in 3.5wt% NaCl solution. The multiple regression model was established to evaluate effects of structure and growth parameters, which had confirmed that the mixing entropy has a great effect on the grain size and corrosion property.