Interface Bonding Integration of Perovskite Wafer with TFT Array for X-ray Imaging

Metal halide perovskites have shown great success in high-sensitive direct X-ray detection and further integrating perovskites with pixel chip is crucial for X-ray imaging. Herein, an ingenious interface bonding strategy was applied to integrate the polycrystalline CsPbBr3 wafer with the thin-film transistor (TFT) array. A Polyimide-CsPbBr3 (PI-CsPbBr3) composite binder with satisfactory mechanical adhesion and optoelectronic properties was synthesized, and it was used to integrate the free-standing CsPbBr3 wafer with TFT array. Under low-temperature annealing, an interface reconstruction happened with the in-situ formation of homogeneous bridging structure between CsPbBr3 wafer and TFT array, achieving a multichannel X-ray imaging detector. The X-ray detector exhibits high sensitivity of 4310 µC Gyair–1 cm–2 and low detection limit of 442 nGyair s–1. The resulting X-ray imaging panel with pixels offers satisfactory spatial resolution of 2.2 lp mm-1.