Guixiang Wang, Ning Li,  and Deyu Li, Effect of Pd ions in the chemical etching solution, J. Univ. Sci. Technol. Beijing, 14(2007), No. 3, pp. 286-289. https://doi.org/10.1016/S1005-8850(07)60055-3
Cite this article as:
Guixiang Wang, Ning Li,  and Deyu Li, Effect of Pd ions in the chemical etching solution, J. Univ. Sci. Technol. Beijing, 14(2007), No. 3, pp. 286-289. https://doi.org/10.1016/S1005-8850(07)60055-3
Materials

Effect of Pd ions in the chemical etching solution

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  • Corresponding author:

    Ning Li    E-mail: lininghit@263.com

  • Received: 26 August 2006
  • The acrylonitrile-butadiene-styrene (ABS) surface was etched by dipping it into chromic acid-sulfuric acid containing a trace amount of palladium. The surface roughness, activity, and valence bond were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results showed that with the increase of Pd concentration in the etching solution the ABS surface roughness reduced. The ratio of O to C increases and forms a large amount of O=C-O functional groups by dipping into Pd contained etching solution, thus the amount of colloids palladium adsorption increases. The carboxyl group acts as the adsorption site for the Pd/Sn catalyst.
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