Wei-long Liu, Shu-huei Hsieh, Ching He Chen, and Wen-jauh Chen, Effect of Fe metal on the growth of silicon oxide nanowires, Int. J. Miner. Metall. Mater., 16(2009), No. 3, pp. 317-321. https://doi.org/10.1016/S1674-4799(09)60057-1
Cite this article as:
Wei-long Liu, Shu-huei Hsieh, Ching He Chen, and Wen-jauh Chen, Effect of Fe metal on the growth of silicon oxide nanowires, Int. J. Miner. Metall. Mater., 16(2009), No. 3, pp. 317-321. https://doi.org/10.1016/S1674-4799(09)60057-1
Wei-long Liu, Shu-huei Hsieh, Ching He Chen, and Wen-jauh Chen, Effect of Fe metal on the growth of silicon oxide nanowires, Int. J. Miner. Metall. Mater., 16(2009), No. 3, pp. 317-321. https://doi.org/10.1016/S1674-4799(09)60057-1
Citation:
Wei-long Liu, Shu-huei Hsieh, Ching He Chen, and Wen-jauh Chen, Effect of Fe metal on the growth of silicon oxide nanowires, Int. J. Miner. Metall. Mater., 16(2009), No. 3, pp. 317-321. https://doi.org/10.1016/S1674-4799(09)60057-1
Silicon oxide (SiOx) nanowires are generally grown on Si substrate under the catalysis of Au in N2 atmosphere at elevated temperatures. Because the price of Au metal is quite high, Fe metal is then used to replace a part of Au for catalyzing the growth of SiOx nanowires. The results show that the Fe film can be used as the diffusion barrier of Au. SiOx nanowires are grown on Au/Fe/Si substrate at 1030℃. Under the catalysis of Fe/Au, the efficiency for the growth of SiOx nanowires is promoted.
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