Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model

The growth of {100} oriented CVD(Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(R_q) under Joe's model are influenced intensively by temperature(T_s) and not evident bymass fraction w_c1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.