Atomic scale KMC simulation of 100 oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model
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Graphical Abstract
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Abstract
The growth of 100 oriented CVD(Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of 100 oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe's model are influenced intensively by temperature(Ts) and not evident bymass fraction wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.
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